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IXBT10N170 PDF预览

IXBT10N170

更新时间: 2024-11-18 03:14:43
品牌 Logo 应用领域
IXYS 晶体双极型晶体管
页数 文件大小 规格书
5页 597K
描述
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

IXBT10N170 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268包装说明:PLASTIC PACKAGE-3
针数:4Reach Compliance Code:unknown
风险等级:8.47外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:1700 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-268
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1800 ns
标称接通时间 (ton):63 nsBase Number Matches:1

IXBT10N170 数据手册

 浏览型号IXBT10N170的Datasheet PDF文件第2页浏览型号IXBT10N170的Datasheet PDF文件第3页浏览型号IXBT10N170的Datasheet PDF文件第4页浏览型号IXBT10N170的Datasheet PDF文件第5页 
VCES = 1700 V  
IC25 20 A  
VCE(sat) = 3.8 V  
HighVoltage,HighGain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
IXBH 10N170  
IXBT 10N170  
=
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
20  
10  
40  
A
A
A
TO-247AD(IXBH)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM  
=
=
20  
A
V
TAB)  
(RBSOA)  
Clamped inductive load  
VCES  
1350  
G
C
E
PC  
TC = 25°C  
140  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
E=Emitter,  
TAB = Collector  
Features  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High Blocking Voltage  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
z
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
z
Low conduction losses  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
z
z
High current handling capability  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
MOS Gate turn-on  
- drive simplicity  
z
Molding epoxies meet UL 94 V-0  
flammability classification  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
Temperature Coefficent  
IC = 250 µA, VCE = VGE  
Temperature Coefficent  
1700  
3.0  
V
%/K  
V
AC motor speed control  
z
0.10  
Uninterruptible power supplies (UPS)  
5.0  
z
Switched-mode and resonant-mode  
power supplies  
Capacitor discharge circuits  
- 0.24  
%/K  
z
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
10 µA  
100 µA  
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
High power density  
z
Suitable for surface mounting  
VCE(sat)  
3.4  
4.1  
3.8  
V
V
z
Easy to mount with 1 screw,  
TJ = 125°C  
(isolated mounting screw hole)  
DS99048(05/03)  
© 2003 IXYS All rights reserved  

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