5秒后页面跳转
IXBT10N170 PDF预览

IXBT10N170

更新时间: 2024-09-15 03:14:43
品牌 Logo 应用领域
IXYS 晶体双极型晶体管
页数 文件大小 规格书
5页 597K
描述
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

IXBT10N170 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-268包装说明:PLASTIC PACKAGE-3
针数:4Reach Compliance Code:unknown
风险等级:8.47外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:1700 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-268
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1800 ns
标称接通时间 (ton):63 nsBase Number Matches:1

IXBT10N170 数据手册

 浏览型号IXBT10N170的Datasheet PDF文件第2页浏览型号IXBT10N170的Datasheet PDF文件第3页浏览型号IXBT10N170的Datasheet PDF文件第4页浏览型号IXBT10N170的Datasheet PDF文件第5页 
VCES = 1700 V  
IC25 20 A  
VCE(sat) = 3.8 V  
HighVoltage,HighGain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
IXBH 10N170  
IXBT 10N170  
=
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
20  
10  
40  
A
A
A
TO-247AD(IXBH)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM  
=
=
20  
A
V
TAB)  
(RBSOA)  
Clamped inductive load  
VCES  
1350  
G
C
E
PC  
TC = 25°C  
140  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
E=Emitter,  
TAB = Collector  
Features  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High Blocking Voltage  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
z
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
z
Low conduction losses  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
z
z
High current handling capability  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
MOS Gate turn-on  
- drive simplicity  
z
Molding epoxies meet UL 94 V-0  
flammability classification  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
Temperature Coefficent  
IC = 250 µA, VCE = VGE  
Temperature Coefficent  
1700  
3.0  
V
%/K  
V
AC motor speed control  
z
0.10  
Uninterruptible power supplies (UPS)  
5.0  
z
Switched-mode and resonant-mode  
power supplies  
Capacitor discharge circuits  
- 0.24  
%/K  
z
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
10 µA  
100 µA  
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
High power density  
z
Suitable for surface mounting  
VCE(sat)  
3.4  
4.1  
3.8  
V
V
z
Easy to mount with 1 screw,  
TJ = 125°C  
(isolated mounting screw hole)  
DS99048(05/03)  
© 2003 IXYS All rights reserved  

与IXBT10N170相关器件

型号 品牌 获取价格 描述 数据表
IXBT12N300 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, TO-268,
IXBT12N300HV IXYS

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Channel,
IXBT16N170 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXBT16N170 IXYS

获取价格

Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268,
IXBT16N170A IXYS

获取价格

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXBT16N170A LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXBT16N170AHV IXYS

获取价格

Insulated Gate Bipolar Transistor,
IXBT16N170AHV LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXBT16N360HV LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXBT20N300 IXYS

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, PLASTIC,