Datasheet > IXBT16N170AHV

IXBT16N170AHV

更新时间： 2024-09-16 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
3页	196K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXBT16N170AHV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C25= 16A

V_CE(sat) 6.0V

IXBA16N170AHV

IXBT16N170AHV

TO-263HV (IXBA)

C (Tab)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

1700

TO-268HV (IXBT)

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1ms

C (Tab)

G = Gate

E = Emitter

= Collector

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 33

I_CM= 40

1350

Tab = Collector

Clamped Inductive Load

t_sc

V_GE= 15V, V_CE= 1200V, T_J= 125°C

μs

(SCSOA)

R_G= 33, Non Repetitive

P_C

T_C= 25°C

150

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

-55 ... +150



High Voltage Package

High Blocking Voltage

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



^Anti-Parallel Diode

^Low Conduction Losses

F_C

Mounting Force (TO-263)

10..65 / 22..14.6

N/lb

Weight

TO-263

TO-268

2.5

4.0

Advantages

^Low Gate Drive Requirement

^High Power Density

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

1700

2.5

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

5.5

Applications:

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

μA

^Switch-Mode and Resonant-Mode

Power Supplies

T_J= 125°C

1.5 mA

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^Uninterruptible Power Supplies (UPS)

^Laser Generators

V_CE(sat)

I_C= 10A, V_GE= 15V, Note 1

6.0

^Capacitor Discharge Circuits

^AC Switches

5.0

DS100551(8/13)

12 3

中文翻译

下载PDF

与IXBT16N170AHV相关器件

型号	品牌	获取价格	描述	数据表
IXBT16N360HV	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBT20N300	IXYS	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, PLASTIC,
IXBT20N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, TO-268,
IXBT20N300HV	IXYS	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel,
IXBT20N300HV	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel,
IXBT20N360HV	IXYS	获取价格	Insulated Gate Bipolar Transistor
IXBT20N360HV	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBT22N300HV	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBT24N170	IXYS	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268,
IXBT24N170	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,