品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | 栅 | |
页数 | 文件大小 | 规格书 |
7页 | 287K | |
描述 | ||
Insulated Gate Bipolar Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBT22N300HV | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT24N170 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, | |
IXBT24N170 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXBT28N170A | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, PLASTIC, | |
IXBT2N250 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBT2N250 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 | |
IXBT2N250-TR | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBT32N300HV | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor | |
IXBT32N300HV | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT42N170 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, |