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IXBT12N300HV PDF预览

IXBT12N300HV

更新时间: 2024-11-04 21:17:19
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
5页 247K
描述
Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Channel,

IXBT12N300HV 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliant风险等级:8.45
最大集电极电流 (IC):30 A集电极-发射极最大电压:3000 V
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

IXBT12N300HV 数据手册

 浏览型号IXBT12N300HV的Datasheet PDF文件第2页浏览型号IXBT12N300HV的Datasheet PDF文件第3页浏览型号IXBT12N300HV的Datasheet PDF文件第4页浏览型号IXBT12N300HV的Datasheet PDF文件第5页 
Preliminary Technical Information  
High Voltage, High Gain  
BiMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 12A  
VCE(sat) 3.2V  
IXBA12N300HV  
IXBT12N300HV  
TO-263 (IXBA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
3000  
3000  
V
V
TO-268 (IXBT)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
30  
12  
100  
A
A
A
C (Tab)  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 30Ω  
ICM = 98  
1500  
A
V
Tab = Collector  
Clamped Inductive Load  
PC  
TC = 25°C  
160  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
High Voltage Package  
High Blocking Voltage  
Weight  
TO-263  
TO-268  
2.5  
4.0  
g
g
z
z Anti-Parallel Diode  
z Low Conduction Losses  
Advantages  
z Low Gate Drive Requirement  
z High Power Density  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
Applications:  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
3.0  
V
V
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
mA  
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
TJ = 125°C  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z Capacitor Discharge Circuits  
z AC Switches  
VCE(sat)  
IC = 12A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100496A(04/13)  

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