是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | 风险等级: | 8.45 |
最大集电极电流 (IC): | 30 A | 集电极-发射极最大电压: | 3000 V |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 160 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBT16N170 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBT16N170 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, | |
IXBT16N170A | IXYS |
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High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor | |
IXBT16N170A | LITTELFUSE |
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BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT16N170AHV | IXYS |
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Insulated Gate Bipolar Transistor, | |
IXBT16N170AHV | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT16N360HV | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBT20N300 | IXYS |
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Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, PLASTIC, | |
IXBT20N300 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, TO-268, | |
IXBT20N300HV | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, |