Datasheet > IXBT20N360HV

IXBT20N360HV

更新时间： 2024-11-18 19:51:15

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	290K
描述
Insulated Gate Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXBT20N360HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.31	Base Number Matches：	1

IXBT20N360HV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3600V

I_C110= 20A

V_CE(sat) 3.4V

IXBT20N360HV

IXBH20N360HV

TO-268HV (IXBT)

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3600

C (Tab)

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247HV (IXBH)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

220

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 10

Clamped Inductive Load

I_CM= 160

V_CES 1500

C (Tab)

T_SC

(SCSOA)

V_GE= 15V, T_J= 125°C,

R_G= 52, V_CE=1500V, Non-Repetitive

G = Gate

E = Emitter

= Collector

μs

Tab = Collector

P_C

T_C= 25°C

430

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



High Voltage Packages

High Blocking Voltage



M_d

Mounting Torque (TO-247HV)

1.13/10

Nm/lb.in



High Peak Current Capability

Low Saturation Voltage

Weight

TO-268HV

TO-247HV

Advantages

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values



Low Gate Drive Requirement

High Power Density

Min.

3600

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

Applications

25 μA

500 μA

T_J= 125°C



Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

AC Switches

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA



V_CE(sat)

I_C= 20A, V_GE= 15V, Note 1

2.9

3.6

3.4



DS100643(12/14)

12 3 4 5 6

中文翻译

下载PDF

与IXBT20N360HV相关器件

型号	品牌	获取价格	描述	数据表
IXBT22N300HV	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBT24N170	IXYS	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268,
IXBT24N170	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBT28N170A	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, PLASTIC,
IXBT2N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBT2N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-268AA, TO-268, 3
IXBT2N250-TR	IXYS	获取价格	Insulated Gate Bipolar Transistor,
IXBT32N300HV	IXYS	获取价格	Insulated Gate Bipolar Transistor
IXBT32N300HV	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBT42N170	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,