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IXBD4410PI PDF预览

IXBD4410PI

更新时间： 2024-11-17 22:12:15
品牌 Logo 应用领域
IXYS 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
11页 705K
描述
ISOSMART Half Bridge Driver Chipset

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中文翻译

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IXBD4410PI 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP,
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.82Is Samacsys：N
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-PDIP-T16JESD-609代码：e3
长度：19.7485 mm功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C标称输出峰值电流：2 A
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：3.556 mm最大供电电压：16.5 V
最小供电电压：10 V标称供电电压：15 V
电源电压1-最大：20 V电源电压1-分钟：10 V
表面贴装：NO温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：35断开时间：0.15 µs
接通时间：0.175 µs宽度：7.62 mm
Base Number Matches：1

IXBD4410PI 数据手册

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IXBD4410  
IXBD4411  
ISOSMARTTM Half Bridge Driver Chipset  
Type  
Description  
Package  
Temperature Range  
IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP  
IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP  
-40 to +85°C  
-40 to +85°C  
IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO  
IXBD4411SI Full-Feature High-Side Driver 16-Pin SO  
-40 to +85°C  
-40 to +85°C  
The IXBD4410/IXBD4411 ISOSMART  
chipset is designed to control the gates  
of two Power MOSFETs or Power  
IGBTs that are connected in a half-  
bridge (phase-leg) configuration for  
driving multiple-phase motors, or used  
in applications that require half-bridge  
power circuits. The IXBD4410/  
IXBD4411 is a full-feature chipset  
consisting of two 16-Pin DIP or SO  
devices interfaced and isolated by two  
small-signal ferrite pulse transformers.  
The small-signal transformers provide  
greater than 1200 V isolation.  
reference IXBD4411. They incorporate  
undervoltage VDD or VEE lockout and  
overcurrent or desaturation shutdown  
to protect the IGBT or Power MOSFET  
devices from damage.  
Features  
z
z
z
z
z
1200 V or greater low-to-high side  
isolation.  
Drives Power Systems Operating on  
up to 575 V AC mains  
dv/dt immunity of greater than  
50V/ns  
The chipset provides the necessary  
gate drive signals to fully control the  
grounded-source low-side power  
device as well as the floating-source  
high-side power device. Additionally,  
the IXBD4410/4411 chipset provides a  
negative-going, off-state gate drive  
signal for improved turn-off of IGBTs or  
Power MOSFETs and a system logic-  
compatible status fault output FLT to  
indicate overcurrent or desaturation,  
and undervoltage V or VEE. During a  
status fault, both chDipDset keep their  
respective gate drive outputs off; at  
VEE.  
Proprietary low-to-high side level  
translation and communication  
On-chip negative gate-drive supply  
to ensure Power MOSFET or IGBT  
turn-off and to prevent gate noise  
interference  
z
z
5 V logic compatible HCMOS inputs  
with hysteresis  
Available in either the 16-Pin DIP or  
the 16-Pin wide-body, small-outline  
plastic package  
20 ns switching time with 1000 pF  
load; 100 ns switching time with  
10,000 pF load  
Even with commutating noise ambients  
greaterthan 50V/nsandupto1200V  
potentials, this chipset establishes  
error-free two-way communications  
between the system ground-reference  
IXBD4410 and the inverter output-  
z
z
z
z
100 ns propagation delay time  
2 A peak output drive capability  
Self shut-down of output in response  
to over-current or short-circuit  
Under-voltage and over-voltage VDD  
lockout protection  
z
z
z
Protection from cross conduction of  
the half bridge  
Logic compatible fault indication  
from both low and high-side driver  
Applications  
540 V-  
z 1- or 3-Phase Motor Controls  
z Switch Mode Power Supplies  
(SMPS)  
z Uninterruptible Power Supplies  
(UPS)  
z Induction Heating and Welding  
Systems  
z Switching Amplifiers  
z General Power Conversion Circuits  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
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中文翻译

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