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IXBD4410P PDF预览

IXBD4410P

更新时间: 2024-11-05 22:12:15
品牌 Logo 应用领域
IXYS 驱动器
页数 文件大小 规格书
11页 705K
描述
ISOSMART Half Bridge Driver Chipset

IXBD4410P 数据手册

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IXBD4410  
IXBD4411  
ISOSMARTTM Half Bridge Driver Chipset  
Type  
Description  
Package  
Temperature Range  
IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP  
IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP  
-40 to +85°C  
-40 to +85°C  
IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO  
IXBD4411SI Full-Feature High-Side Driver 16-Pin SO  
-40 to +85°C  
-40 to +85°C  
The IXBD4410/IXBD4411 ISOSMART  
chipset is designed to control the gates  
of two Power MOSFETs or Power  
IGBTs that are connected in a half-  
bridge (phase-leg) configuration for  
driving multiple-phase motors, or used  
in applications that require half-bridge  
power circuits. The IXBD4410/  
IXBD4411 is a full-feature chipset  
consisting of two 16-Pin DIP or SO  
devices interfaced and isolated by two  
small-signal ferrite pulse transformers.  
The small-signal transformers provide  
greater than 1200 V isolation.  
reference IXBD4411. They incorporate  
undervoltage VDD or VEE lockout and  
overcurrent or desaturation shutdown  
to protect the IGBT or Power MOSFET  
devices from damage.  
Features  
z
z
z
z
z
1200 V or greater low-to-high side  
isolation.  
Drives Power Systems Operating on  
up to 575 V AC mains  
dv/dt immunity of greater than  
50V/ns  
The chipset provides the necessary  
gate drive signals to fully control the  
grounded-source low-side power  
device as well as the floating-source  
high-side power device. Additionally,  
the IXBD4410/4411 chipset provides a  
negative-going, off-state gate drive  
signal for improved turn-off of IGBTs or  
Power MOSFETs and a system logic-  
compatible status fault output FLT to  
indicate overcurrent or desaturation,  
and undervoltage V or VEE. During a  
status fault, both chDipDset keep their  
respective gate drive outputs off; at  
VEE.  
Proprietary low-to-high side level  
translation and communication  
On-chip negative gate-drive supply  
to ensure Power MOSFET or IGBT  
turn-off and to prevent gate noise  
interference  
z
z
5 V logic compatible HCMOS inputs  
with hysteresis  
Available in either the 16-Pin DIP or  
the 16-Pin wide-body, small-outline  
plastic package  
20 ns switching time with 1000 pF  
load; 100 ns switching time with  
10,000 pF load  
Even with commutating noise ambients  
greaterthan 50V/nsandupto1200V  
potentials, this chipset establishes  
error-free two-way communications  
between the system ground-reference  
IXBD4410 and the inverter output-  
z
z
z
z
100 ns propagation delay time  
2 A peak output drive capability  
Self shut-down of output in response  
to over-current or short-circuit  
Under-voltage and over-voltage VDD  
lockout protection  
z
z
z
Protection from cross conduction of  
the half bridge  
Logic compatible fault indication  
from both low and high-side driver  
Applications  
540 V-  
z 1- or 3-Phase Motor Controls  
z Switch Mode Power Supplies  
(SMPS)  
z Uninterruptible Power Supplies  
(UPS)  
z Induction Heating and Welding  
Systems  
z Switching Amplifiers  
z General Power Conversion Circuits  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
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