Datasheet > IXBA16N170AHV

IXBA16N170AHV

更新时间： 2024-11-18 21:13:15

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
2页	169K
描述
Insulated Gate Bipolar Transistor,

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技术参数
数据手册

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IXBA16N170AHV 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	风险等级：	8.52
JESD-609代码：	e3	湿度敏感等级：	2
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

IXBA16N170AHV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C25= 16A

V_CE(sat) 6.0V

IXBA16N170AHV

IXBT16N170AHV

TO-263HV (IXBA)

C (Tab)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

1700

TO-268HV (IXBT)

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1ms

C (Tab)

G = Gate

E = Emitter

= Collector

SSOA

(RBSOA)

_GE= 15V, T_VJ= 125°C, R_G= 33

I_CM= 40

1350

Tab = Collector

Clamped Inductive Load

t_sc

V_GE= 15V, V_CE= 1200V, T_J= 125°C

μs

(SCSOA)

R_G= 33, Non Repetitive

P_C

T_C= 25°C

150

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

-55 ... +150



High Voltage Package

High Blocking Voltage

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



^Anti-Parallel Diode

^Low Conduction Losses

F_C

Mounting Force (TO-263)

10..65 / 22..14.6

N/lb

Weight

TO-263

TO-268

2.5

4.0

Advantages

^Low Gate Drive Requirement

^High Power Density

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

1700

2.5

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

5.5

Applications:

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

μA

^Switch-Mode and Resonant-Mode

Power Supplies

T_J= 125°C

1.5 mA

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^Uninterruptible Power Supplies (UPS)

^Laser Generators

V_CE(sat)

I_C= 10A, V_GE= 15V, Note 1

6.0

^Capacitor Discharge Circuits

^AC Switches

5.0

DS100551(8/13)

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