是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | LEAD FREE PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 1.13 | Samacsys Confidence: | 4 |
Samacsys Status: | Released | Samacsys PartID: | 326649 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | Transistor |
Samacsys Package Category: | Transistor Outline, Vertical | Samacsys Footprint Name: | TO-262_1 |
Samacsys Released Date: | 2017-04-10 14:11:35 | Is Samacsys: | N |
雪崩能效等级(Eas): | 255 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 343 A |
最大漏极电流 (ID): | 195 A | 最大漏源导通电阻: | 0.0017 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 375 W | 最大脉冲漏极电流 (IDM): | 1372 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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IRL1004PBF | INFINEON |
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