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IRLB3034PBF PDF预览

IRLB3034PBF

更新时间: 2024-11-21 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 292K
描述
HEXFET Power MOSFET

IRLB3034PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.13Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:326649
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-262_1
Samacsys Released Date:2017-04-10 14:11:35Is Samacsys:N
雪崩能效等级(Eas):255 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):343 A
最大漏极电流 (ID):195 A最大漏源导通电阻:0.0017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):375 W最大脉冲漏极电流 (IDM):1372 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLB3034PBF 数据手册

 浏览型号IRLB3034PBF的Datasheet PDF文件第2页浏览型号IRLB3034PBF的Datasheet PDF文件第3页浏览型号IRLB3034PBF的Datasheet PDF文件第4页浏览型号IRLB3034PBF的Datasheet PDF文件第5页浏览型号IRLB3034PBF的Datasheet PDF文件第6页浏览型号IRLB3034PBF的Datasheet PDF文件第7页 
PD -97363  
IRLB3034PbF  
HEXFET® Power MOSFET  
Applications  
l DC Motor Drive  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
VDSS  
40V  
RDS(on) typ.  
1.4m  
1.7m  
343A  
195A  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
S
Benefits  
l Optimized for Logic Level Drive  
l Very Low RDS(ON) at 4.5V VGS  
l Superior R*Q at 4.5V VGS  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
TO-220AB  
IRLB3034PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
343  
243  
195  
1372  
375  
2.5  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
±20  
4.6  
Gate-to-Source Voltage  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
255  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
0.5  
Max.  
0.4  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
–––  
62  
°C/W  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
www.irf.com  
1
01/14/09  

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