Datasheet > IRLBL1304

IRLBL1304

更新时间： 2024-11-25 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	125K
描述
HEXFET㈢ Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLBL1304 数据手册

PD-91843A

IRLBL1304

HEXFET^®Power MOSFET

l >1mm lower profile than D²Pak

l Same footprint as D²pak

l Logic Level Gate

V_DSS= 40V

l Surface mount

_DS(on)= 0.0045Ω

l Ultra Low On-Resistance

l Fully Avalanche Rated

l 50% greater current in typ. application

condition vs. D²Pak

I_D= 185Aꢀ

Description

The HEXFET^®MOSFET is the most popular power MOSFET in the world.

This particular HEXFET^®MOSFET is in the SuperD²Pak^TMand hasthe same

outline and pinout as the standard D²Pak but has increased current handling

capability and >1mm lower profile. This makes it ideal to reduce component

count in multiparallel D²Pak operation, reduce system power dissipation or

upgrade existing design.

This package has also been designed to meet automotive qualification

standard Q101 and can be used with normal surface mouting equipment

and has the same temperature profile and recommendations as the

commonly used D²Pak.

Super-D²Pak^TM

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

185, pkg limited to 95A*

130, pkg limited to 95A*

I_DM

740

300

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

2.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

Single Pulse Avalanche Energy

Avalanche Current

1160

100

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

260 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

0.50

Units

R_θJC

R_θJA

–––

* Current capability in normal application, see Fig.9.

www.irf.com

2/16/00

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRLBL1304相关器件

型号	品牌	获取价格	描述	数据表
IRLC014	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| CHIP
IRLC024	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| CHIP
IRLC034	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| CHIP
IRLC044	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| CHIP
IRLC110	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP
IRLC120	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP
IRLC130	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP
IRLC1304	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| CHIP
IRLC140	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP
IRLC9024N	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 55V V(BR)DSS \| CHIP