IRLD110PBF

更新时间： 2024-11-25 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1511K
描述
Power MOSFET

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数据手册
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IRLD110PBF 数据手册

IRLD110, SiHLD110

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

• For Automatic Insertion

_DS(on)(Ω)

V_GS= 5.0 V

0.54

RoHS*

Q_g(Max.) (nC)

6.1

2.6

3.3

COMPLIANT

• End Stackable

_gs(nC)

_gd(nC)

• Logic-Level Gate Drive

Configuration

Single

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Lead (Pb)-free Available

HEXDIP

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

N-Channel MOSFET

ORDERING INFORMATION

Package

HEXDIP

IRLD110PbF

SiHLD110-E3

IRLD110

Lead (Pb)-free

SnPb

SiHLD110

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

1.0

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C=100°C

0.70

Pulsed Drain Current^a

I_DM

8.0

Linear Derating Factor

0.0083

490

W/°C

Single Pulse Avalanche Energy^b

Avalanche current^a

E_AS

I_AR

1.0

Repetitive Avalanche Energy^a

E_AR

0.13

Maximum Power Dissipation

T_C= 25 °C

P_D

1.3

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 183 mH, R_G= 25 Ω, I_AS= 2.0 A (see fig. 12).

c. I_SD≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91309

S-81378-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRLD110PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLD120PBF	VISHAY	类似代替	Power MOSFET

与IRLD110PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLD120	VISHAY	获取价格	Power MOSFET
IRLD120	INFINEON	获取价格	POWER MOSFET
IRLD120PBF	VISHAY	获取价格	Power MOSFET
IRLD120PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLF110	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 3.5A I(D) \| TO-205AF
IRLF120	INFINEON	获取价格	HEXFET TRANSISTORS THRU-HOLE (TO-39)
IRLF120PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
IRLF120SCX	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
IRLF130	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-205AF
IRLF230	INFINEON	获取价格	HEXFET TRANSISTOR

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