IRLH5036PBF

更新时间： 2024-11-16 11:10:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	304K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRLH5036PBF 数据手册

PD-96300

IRLH5036PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

5.5

Ω

R_{G (typical)}

1.2

Ω

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )

Low Thermal Resistance to PCB (< 0.5°C/W)

100% Rg tested

Lower Conduction Losses

Enables better thermal dissipation

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRLH5036TRPBF

IRLH5036TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

± 16

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

400

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

250

Linear Derating Factor

0.029

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 8

www.irf.com

04/12/10

12 3 4 5 6 7 8

中文翻译

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