PD - 97570B
IRLHS6276PbF
HEXFET® Power MOSFET
VDS
VGS
20
12
V
V
±
RDS(on) max
(@VGS = 4.5V)
D1
G2
45
62
m
Ω
S2
D1
D2
RDS(on) max
(@VGS = 2.5V)
m
Ω
S1
G1
ID
D2
3.4
A
(@Tc(Bottom) = 25°C)
2mm x 2mm Dual PQFN
Applications
• Charge and discharge switch for battery application
• Load/System Switch
FeaturesandBenefits
Features
Resulting Benefits
Low RDSon (≤ 45mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRLHS6276TRPBF
IRLHS6276TR2PBF
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
400
Absolute Maximum Ratings
Parameter
Max.
20
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
±12
4.5
3.6
9.6
6.1
3.4
40
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC(Bottom) = 25°C
A
Continuous Drain Current, VGS @ 4.5V (Package Limited)
Pulsed Drain Current
DM
Power Dissipation
P
P
@TA = 25°C
1.5
6.6
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.012
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 2
www.irf.com
1
07/19/11