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IRLHS6276PBF PDF预览

IRLHS6276PBF

更新时间: 2024-11-16 11:10:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 224K
描述
HEXFET Power MOSFET

IRLHS6276PBF 数据手册

 浏览型号IRLHS6276PBF的Datasheet PDF文件第2页浏览型号IRLHS6276PBF的Datasheet PDF文件第3页浏览型号IRLHS6276PBF的Datasheet PDF文件第4页浏览型号IRLHS6276PBF的Datasheet PDF文件第5页浏览型号IRLHS6276PBF的Datasheet PDF文件第6页浏览型号IRLHS6276PBF的Datasheet PDF文件第7页 
PD - 97570B  
IRLHS6276PbF  
HEXFET® Power MOSFET  
VDS  
VGS  
20  
12  
V
V
±
RDS(on) max  
(@VGS = 4.5V)  
D1  
G2  
45  
62  
m
Ω
S2  
D1  
D2  
RDS(on) max  
(@VGS = 2.5V)  
m
Ω
S1  
G1  
ID  
D2  
3.4  
A
(@Tc(Bottom) = 25°C)  
2mm x 2mm Dual PQFN  
Applications  
Charge and discharge switch for battery application  
Load/System Switch  
FeaturesandBenefits  
Features  
Resulting Benefits  
Low RDSon (45mΩ)  
Low Thermal Resistance to PCB (19°C/W)  
Low Profile (1.0mm)  
Lower Conduction Losses  
Enable better thermal dissipation  
results in Increased Power Density  
Industry-Standard Pinout  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Orderable part number Package Type  
Standard Pack  
Form  
Tape and Reel  
Tape and Reel  
Note  
Quantity  
4000  
IRLHS6276TRPBF  
IRLHS6276TR2PBF  
PQFN Dual 2mm x 2mm  
PQFN Dual 2mm x 2mm  
400  
Absolute Maximum Ratings  
Parameter  
Max.  
20  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
±12  
4.5  
3.6  
9.6  
6.1  
3.4  
40  
GS  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
I
I
I
I
I
I
@ TA = 25°C  
D
D
D
D
D
@ TA = 70°C  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
@ TC(Bottom) = 25°C  
A
Continuous Drain Current, VGS @ 4.5V (Package Limited)  
Pulsed Drain Current  
DM  
Power Dissipation  
P
P
@TA = 25°C  
1.5  
6.6  
D
D
W
Power Dissipation  
@TC(Bottom) = 25°C  
0.012  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Notes  through † are on page 2  
www.irf.com  
1
07/19/11  

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