Datasheet > IRLHS2242

IRLHS2242

更新时间： 2024-11-17 11:14:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	269K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLHS2242 数据手册

IRLHS2242PbF

HEXFET^®Power MOSFET

V_DS

-20

TOP VIEW

V_{GS max}

R_{DS(on) max}

(@V_GS= 4.5V)

R_{DS(on) max}

(@V_GS= 2.5V)

Q_{g typ}

9.6

G 3

2mm x 2mm PQFN

I_D

-8.5

(@T_c(Bottom)= 25°C)

Applications

l Charge and Discharge Switch for Battery Application

l System/load switch

Features and Benefits

Features

Benefits

Low Thermal Resistance to PCB (≤ 13°C/W)

Low Profile (≤ 1.0mm)

Industry-Standard Pinout

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

IRLHS2242TRPbF

IRLHS2242TR2PbF

PQFN 2mm x 2mm

Tape and Reel

4000

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

-20

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±12

-7.2

-5.8

-15

Continuous Drain Current, V_GS@ 4.5V

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

-9.8

-8.5

Continuous Drain Current, V_GS@ 4.5V (Wirebond Limited)

Pulsed Drain Current

-34

2.1

9.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

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December 16, 2013

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