Datasheet > IRLHS2242PBF

IRLHS2242PBF

更新时间： 2024-11-16 11:10:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	266K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLHS2242PBF 数据手册

PD - 96360

IRLHS2242PbF

HEXFET^®Power MOSFET

V_DS

-20

TOP VIEW

V_{GS max}

R_{DS(on) max}

(@V_GS= 4.5V)

R_{DS(on) max}

(@V_GS= 2.5V)

Q_{g typ}

9.6

G 3

2mm x 2mm PQFN

I_D

-8.5

(@T_c(Bottom)= 25°C)

Applications

l Charge and Discharge Switch for Battery Application

l System/load switch

Features and Benefits

Features

Benefits

Low Thermal Resistance to PCB (≤ 13°C/W)

Low Profile (≤ 1.0mm)

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRLHS2242TRPBF

IRLHS2242TR2PBF

PQFN 2mm x 2mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

-20

±12

-7.2

-5.8

Continuous Drain Current, V_GS@ 4.5V

@ T_A= 25°C

@ T_A= 70°C

-15

-9.8

-8.5

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 4.5V (Wirebond Limited)

Pulsed Drain Current

-34

2.1

9.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

www.irf.com

03/18/11

12 3 4 5 6 7...9

中文翻译

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