Datasheet > IRLI2203G

IRLI2203G

更新时间： 2024-11-15 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	292K
描述
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)

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PD - 9.1092A

IRLI2203G

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Logic-Level Gate Drive

V_DSS= 30V

R_DS(on)= 0.010Ω

I_D= 52A

R_DS(on)Specified at V_GS=5.0V & 10V

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications. The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and external

heatsink. This isolation is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip

or by a single screw fixing.

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Continuous Collector Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

210

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.32

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy

Avalanche Current

4.8

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

4.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Min.

––––

Typ.

––––

Max.

3.1

Units

R_θJC

R_θJA

°C/W

Revision 1

To Order

12 3 4 5 6 7 8

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与IRLI2203G相关器件

型号	品牌	获取价格	描述	数据表
IRLI2203G-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-003	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-004	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-004PBF	VISHAY	获取价格	49A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI2203G-005	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-006	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-009	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI2203G-009PBF	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta

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