Datasheet > IRLHS6276TR2PBF

IRLHS6276TR2PBF

更新时间： 2024-09-29 11:10:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	224K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRLHS6276TR2PBF 数据手册

PD - 97570B

IRLHS6276PbF

HEXFET^®Power MOSFET

V_DS

V_GS

R_{DS(on) max}

(@V_GS= 4.5V)

R_{DS(on) max}

(@V_GS= 2.5V)

I_D

3.4

(@T_c(Bottom)= 25°C)

2mm x 2mm Dual PQFN

Applications

• Charge and discharge switch for battery application

• Load/System Switch

FeaturesandBenefits

Features

Resulting Benefits

Low R_DSon(≤ 45mΩ)

Low Thermal Resistance to PCB (≤ 19°C/W)

Low Profile (≤ 1.0mm)

Lower Conduction Losses

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Orderable part number Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRLHS6276TRPBF

IRLHS6276TR2PBF

PQFN Dual 2mm x 2mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

±12

4.5

3.6

9.6

6.1

3.4

Continuous Drain Current, V_GS@ 4.5V

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 4.5V (Package Limited)

Pulsed Drain Current

Power Dissipation

@T_A= 25°C

1.5

6.6

Power Dissipation

@T_C(Bottom)= 25°C

0.012

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 2

www.irf.com

07/19/11

12 3 4 5 6 7...9

中文翻译

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IRLHS6276TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLHS6276TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

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