Datasheet > IRLH7134PBF_15

IRLH7134PBF_15

更新时间： 2024-11-17 01:19:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	263K
描述
Secondary Side Synchronous Rectification

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中文翻译

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数据手册

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IRLH7134PBF_15 数据手册

IRLH7134PbF

HEXFET^®Power MOSFET

V_DS

3.3

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

(@T_c(Bottom)= 25°C)

PQFN 5X6 mm

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

FeaturesandBenefits

Features

Benefits

Low R_DSon(≤4.7mW @ V_GS= 4.5V )

Low Thermal Resistance to PCB (< 1.2°C/W)

Low Profile (<0.9 mm)

Lower Conduction Losses

Enables better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

4000

IRLH7134TRPBF

IRLH7134TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 16

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V

134

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

640

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

104

Linear Derating Factor

Operating Junction and

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through are on page 9

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June 2, 2015

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中文翻译

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