Datasheet > IRLH5030TRPBF

IRLH5030TRPBF

更新时间： 2024-11-17 01:17:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	253K
描述
Secondary Side Synchronous Rectification

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中文翻译

获取价格

数据手册

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IRLH5030TRPBF 数据手册

IRLH5030PbF

HEXFET^®Power MOSFET

V_DS

100

9.9

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

mΩ

R_{G (typical)}

1.2

Ω

I_D

(@T_mb= 25°C)

PQFN 5X6 mm

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Benefits

Features

≤

Ω

Low R_DSon( 9.0m )

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

≤

Low Thermal Resistance to PCB ( 0.8°C/W)

100% Rg tested

≤

Low Profile ( 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Base Part Number

Package Type

Standard Pack

Form Quantity

Tape and Reel 4000

Orderable part number

IRLH5030TRPBF

IRLH5030PBF

PQFN 5mm x 6mm

Absolute Maximum Ratings

Parameter

Max.

±16

Units

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_mb= 25°C

I_D@ T_mb= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

400

3.6

156

Power Dissipation

P_D@T_A= 25°C

P_D@ T_mb= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through are on page 8

May 29, 2013

12 3 4 5 6 7 8

中文翻译

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