IRLD120

更新时间： 2024-09-29 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1586K
描述
Power MOSFET

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中文翻译

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数据手册

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IRLD120 数据手册

IRLD120, SiHLD120

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

• For Automatic Insertion

R_DS(on)(Ω)

V_GS= 5.0 V

0.27

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.0

• End Stackable

_gs(nC)

_gd(nC)

• Logic-Level Gate Drive

7.1

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Lead (Pb)-free Available

Configuration

Single

HEXDIP

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

N-Channel MOSFET

ORDERING INFORMATION

Package

HEXDIP

IRLD120PbF

SiHLD120-E3

IRLD120

Lead (Pb)-free

SnPb

SiHLD120

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

1.3

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C=100°C

0.94

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.0083

690

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

1.3

Repetitive Avalanche Energy^a

E_AR

0.13

1.3

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 153 mH, R_G= 25 Ω, I_AS= 2.6 A (see fig. 12).

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91310

S-Pending-Rev. A, 17-Jul-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRLD120相关器件

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IRLD120PBF	VISHAY	获取价格	Power MOSFET
IRLD120PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLF110	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 3.5A I(D) \| TO-205AF
IRLF120	INFINEON	获取价格	HEXFET TRANSISTORS THRU-HOLE (TO-39)
IRLF120PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
IRLF120SCX	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
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IRLG5AB300X200X0.5	TDK	获取价格	Magnetic Sheets for RFID Flexield

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