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IRLH5030 PDF预览

IRLH5030

更新时间: 2024-11-21 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 257K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

IRLH5030 数据手册

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IRLH5030PbF  
HEXFET® Power MOSFET  
VDS  
100  
9.9  
V
RDS(on) max  
(@VGS = 4.5V)  
Qg (typical)  
mΩ  
44  
nC  
RG (typical)  
1.2  
Ω
ID  
88  
A
(@Tmb = 25°C)  
PQFN 5X6 mm  
Applications  
Secondary Side Synchronous Rectification  
Inverters for DC Motors  
DC-DC Brick Applications  
Boost Converters  
Benefits  
Features  
Ω
Low RDSon ( 9.0m )  
Lower Conduction Losses  
Enable better thermal dissipation  
Increased Reliability  
Low Thermal Resistance to PCB ( 0.8°C/W)  
100% Rg tested  
Low Profile ( 0.9 mm)  
results in Increased Power Density  
Industry-Standard Pinout  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Industrial Qualification  
Base Part Number  
Package Type  
Standard Pack  
Form Quantity  
Tape and Reel  
Orderable part number  
IRLH5030TRPBF  
IRLH5030PBF  
PQFN 5mm x 6mm  
4000  
Absolute Maximum Ratings  
Parameter  
Max.  
±16  
13  
Units  
V
VGS  
Gate-to-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ Tmb = 25°C  
ID @ Tmb = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
11  
A
88  
56  
400  
3.6  
156  
Power Dissipation  
PD @TA = 25°C  
PD @ Tmb = 25°C  
W
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.029  
-55 to + 150  
W/°C  
°C  
TJ  
TSTG  
Notes  through † are on page 9  
www.irf.com © 2015 International Rectifier  
1
Submit Datasheet Feedback  
Ma1y9, 2015  

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The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil