IRLF120

更新时间： 2024-11-24 21:53:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	550K
描述
HEXFET TRANSISTORS THRU-HOLE (TO-39)

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IRLF120 数据手册

PD - 90639A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTORS

THRU-HOLE (TO-39)

IRLF120

100V, N-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRLF120 100V 0.35Ω

5.3A

The Logic Level ‘L’ series of power MOSFETs are de-

signed to be operated with level logic gate-to-source

voltage of 5V. In addition to the well established

characterstics of HEXFETs , they have the added ad-

vantage of providing low drive requirements to inter-

face power loads to logic level IC’s and microprocessors.

TO-39

Fields of applications include: high speed power appli-

cations such as switching regulators, switching con-

verters, motor drivers, solenoid and relay drivers and

drivers for high power bipolar switching transistors re-

quiring high speed and low gatedrive voltage.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Low Drive Requirements

Execellent Temperature Stability

The HEXFET technology is the key to International

Rectifier’s advanced line of logic level power MOSFET

transistors. The efficient geometry and unique process-

ing of the HEXFET achieve very low on-state resistance

combined with high transconductance and great de-

vice ruggedness.

Fast Switching Speeds

n Ease of Paralleling

n Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 5.0V, T = 25°C Continuous Drain Current

5.3

3.4

= 5.0V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.16

±10

120

5.3

2.0

5.5

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

LeadTemperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

08/08/01

12 3 4 5 6 7

中文翻译

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IRLF120 替代型号

型号	品牌	替代类型	描述	数据表
IRLF120PBF	INFINEON	功能相似	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me

与IRLF120相关器件

型号	品牌	获取价格	描述	数据表
IRLF120PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
IRLF120SCX	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me
IRLF130	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-205AF
IRLF230	INFINEON	获取价格	HEXFET TRANSISTOR
IRLF230PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRLG5AB300X200X0.5	TDK	获取价格	Magnetic Sheets for RFID Flexield
IRLH5030	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRLH5030PBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRLH5030PBF_15	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRLH5030TRPBF	INFINEON	获取价格	Secondary Side Synchronous Rectification

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