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IRLD014 PDF预览

IRLD014

更新时间: 2024-11-21 11:10:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1729K
描述
Power MOSFET

IRLD014 数据手册

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IRLD014, SiHLD014  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• For Automatic Insertion  
R
DS(on) ()  
VGS = 5 V  
0.20  
RoHS*  
• End Stackable  
Qg (Max.) (nC)  
8.4  
2.6  
COMPLIANT  
• Logic-Level Gate Drive  
Q
Q
gs (nC)  
gd (nC)  
6.4  
• RDS(on) Specified at VGS = 4 V and 5 V  
• 175 °C Operating Temperature  
• Fast Switching  
Configuration  
Single  
D
HVMDIP  
• Compliant to RoHS Directive 2002/95/EC  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The 4 pin DIP package is a low cost machine-insertiable  
case style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain servers as a  
thermal link to the mounting surface for power dissipation  
levels up to 1 W.  
G
S
G
D
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
HVMDIP  
IRLD014PbF  
SiHLD014-E3  
IRLD014  
Lead (Pb)-free  
SnPb  
SiHLD014  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
10  
TA = 25 °C  
TA = 100 °C  
1.7  
Continuous Drain Current  
VGS at 5.0 V  
ID  
1.2  
14  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.0083  
490  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
EAS  
PD  
T
A = 25 °C  
1.3  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 197 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).  
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91307  
S10-2465-Rev. D, 08-Nov-10  
www.vishay.com  
1

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