IRLD014

更新时间： 2024-11-09 11:10:23

品牌	Logo	应用领域
威世 - VISHAY		/
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8页	1729K
描述
Power MOSFET

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IRLD014 数据手册

IRLD014, SiHLD014

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• For Automatic Insertion

_DS(on)()

V_GS= 5 V

0.20

RoHS*

• End Stackable

Q_g(Max.) (nC)

8.4

2.6

COMPLIANT

• Logic-Level Gate Drive

_gs(nC)

_gd(nC)

6.4

• R_DS(on)Specified at V_GS= 4 V and 5 V

• 175 °C Operating Temperature

• Fast Switching

Configuration

Single

HVMDIP

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertiable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain servers as a

thermal link to the mounting surface for power dissipation

levels up to 1 W.

N-Channel MOSFET

ORDERING INFORMATION

Package

HVMDIP

IRLD014PbF

SiHLD014-E3

IRLD014

Lead (Pb)-free

SnPb

SiHLD014

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 100 °C

1.7

Continuous Drain Current

V_GSat 5.0 V

I_D

1.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.0083

490

W/°C

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

E_AS

P_D

_A= 25 °C

1.3

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 197 mH, R_g= 25 , I_AS= 1.7 A (see fig. 12).

c. I_SD 10 A, dI/dt  90 A/µs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91307

S10-2465-Rev. D, 08-Nov-10

www.vishay.com

12 3 4 5 6 7 8

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IRLD014 替代型号

型号	品牌	替代类型	描述	数据表
IRLD014PBF	VISHAY	类似代替	Power MOSFET

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