Datasheet > IRLC9024N

IRLC9024N

更新时间： 2024-09-28 23:59:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
1页	49K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 55V V(BR)DSS \| CHIP

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中文翻译

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数据手册

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IRLC9024N 数据手册

PD- 91872

IRLC9024N

HEXFET^®Power MOSFET Die in Wafer Form

-55 V

Size 0.9

Rds(on)=0.172Ω

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_(BR)DSS

R_DS(on)

Description

Guaranteed (Min/Max)

Test Conditions

V_GS= 0V, I_D= -250µA

V_GS= -10V, I_D= -3.6A

V_GS= -4.5V, I_D= -3.6A

V_DS= V_GS, I_D= -250µA

V_DS= -55V, V_GS= 0V, T_J= 25°C

V_GS= ±16V

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

-55V Min.

0.172Ω Max.

0.280Ω Max.

1.0V Min., 3.0V Max.

-25µA Max.

V_GS(th)

I_DSS

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Leakage

Operating Junction and

I_GSS

T_J

± 15µA Max.

175°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

99% Al, 1% Si (0.004 mm)

0.066" x 0.085" ( 1.68mm x 2.16 mm)

150mm, with std. < 100 > flat

.014" + / -.003"

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5192

0.1 mm

Reject Ink Dot Size

0.13mm Diameter Minimum, 0.51mm Max.

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRLR/U9024N

Die Outline

3/23/99

中文翻译

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