IRLBD59N04E

更新时间： 2024-09-26 22:17:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
8页	123K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLBD59N04E 数据手册

PD -93910

IRLBD59N04E

HEXFET^®Power MOSFET

l Integrated Temperature Sensing Diode

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 40V

l 175°C Operating Temperature

l Fully Avalanche Rated

R_DS(on)= 0.018Ω

l Zener Gate Protected

I_D= 59A

Description

The IRLBD59N04E is a 40V, N-channel HEXFET^®

power MOSFET with gate protection provided by

integrated back to back zener diodes. Temperature

sensing is given by the change in forward voltage drop

oftwoantiparallelelectricallyisolatedpoly-silicondiodes.

The IRLBD59N04E provides cost effective temperature

sensing for system protection along with the quality and

ruggednessyouexpectfromaHEXFETpowerMOSFET.

5 Lead-D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

230

P_D@T_C= 25°C

Power Dissipation

130

W/°C

Linear Derating Factor

0.89

± 10

320

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

I_G

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V_GSClamp Current

V/ns

2.2

± 50

± 2.0

-55 to + 175

V_ESD

T_J

Electrostatic Votage Rating

Operating Junction and

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.12

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

www.irf.com

4/11/00

12 3 4 5 6 7 8

中文翻译

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