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IRLB4132 PDF预览

IRLB4132

更新时间: 2024-11-22 11:15:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 2646K
描述
Uninterruptible power supply

IRLB4132 数据手册

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IRLB4132PbF  
HEXFET® Power MOSFET  
Application  
Optimized for UPS/Inverter Applications  
Low Voltage Power Tools  
VDSS  
30  
V
RDS(on) max  
(@ VGS = 10V)  
(@ VGS = 4.5V)  
Qg (typical)  
3.5  
m  
4.5  
36  
nC  
A
Benefits  
ID (Silicon Limited)  
ID (Package Limited)  
150  
78A  
Best in Class Performance for UPS/Inverter Applications  
Very Low RDS(on) at 4.5V VGS  
Ultra-Low Gate Impedance  
Fully Characterized Avalanche Voltage and Current  
Lead-Free, RoHS Compliant  
S
D
G
TO-220AB  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base part number Package Type  
IRLB4132PbF TO-220AB  
Orderable Part Number  
Form  
Quantity  
Tube  
50  
IRLB4132PbF  
Absolute Maximum Rating  
Symbol  
Parameter  
Max.  
30  
Units  
V
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
VGS  
± 20  
150  
100  
78  
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current   
620  
140  
68  
PD @TC = 25°C  
Maximum Power Dissipation   
W
W
PD @TC = 100°C Maximum Power Dissipation   
Linear Derating Factor  
0.90  
W/°C  
TJ  
Operating Junction and  
-55 to + 175  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Mounting Torque, 6-32 or M3 Screw  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
0.50  
–––  
Max.  
1.11  
–––  
62  
Units  
Junction-to-Case   
RJC  
RCS  
RJA  
Case-to-Sink, Flat Greased Surface  
°C/W  
Junction-to-Ambient   
Notes through are on page 8  
1
2019-08-14  

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TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 185A I(D) | TO-220VAR