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IRLBA3803PBF PDF预览

IRLBA3803PBF

更新时间: 2024-11-09 21:17:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 198K
描述
Power Field-Effect Transistor, 179A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN

IRLBA3803PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SUPER-220, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):610 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):179 A最大漏极电流 (ID):179 A
最大漏源导通电阻:0.005 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-273AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):270 W最大脉冲漏极电流 (IDM):720 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLBA3803PBF 数据手册

 浏览型号IRLBA3803PBF的Datasheet PDF文件第2页浏览型号IRLBA3803PBF的Datasheet PDF文件第3页浏览型号IRLBA3803PBF的Datasheet PDF文件第4页浏览型号IRLBA3803PBF的Datasheet PDF文件第5页浏览型号IRLBA3803PBF的Datasheet PDF文件第6页浏览型号IRLBA3803PBF的Datasheet PDF文件第7页 
PD - 95263A  
IRLBA3803PbF  
HEXFET® Power MOSFET  
Logic-LevelGateDrive  
Advanced Process Technology  
175°COperatingTemperature  
Fast Switching  
D
VDSS = 30V  
Fully Avalanche Rated  
Lead-Free  
RDS(on) = 0.005Ω  
G
ID = 179A†  
S
Description  
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvanced  
processing techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well  
known for, provides the designer with an extremely efficient and  
reliable device for use in a wide variety of applications.  
TheSuper-220isapackagethathasbeendesignedtohave thesame  
mechanical outline and pinout as the industry standard TO-220 but  
can house a considerably larger silicon die. It has increased current  
handling capability over both the TO-220 and the much larger TO-  
247 package. This makes it ideal to reduce component count in  
multiparalled TO-220 applications, reduce system power dissipation,  
upgrade existing designs or have TO-247 performance in a TO-220  
outline.  
Super - 220  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
179 †  
126†  
720  
270  
1.8  
A
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±16  
610  
71  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Currentꢀ  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
27  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Recommended clip force  
°C  
N
300 (1.6mm from case )  
20  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
0.5  
Max.  
Units  
°C/W  
1
RθJC  
0.55  
–––  
58  
RθCS  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
RθJA  
–––  
www.irf.com  
10/01/10  

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