是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, SUPER-220, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 610 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 179 A | 最大漏极电流 (ID): | 179 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-273AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 250 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 270 W | 最大脉冲漏极电流 (IDM): | 720 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLBA3803PPBF | INFINEON |
获取价格 |
HEXFET® Power MOSFET | |
IRLBD59N04E | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRLBD59N04EPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 39A I(D), 40V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
IRLBL1304 | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRLC014 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP | |
IRLC024 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP | |
IRLC034 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP | |
IRLC044 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP | |
IRLC110 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP | |
IRLC120 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP |