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IRLBA3803PPBF

更新时间： 2024-11-25 12:19:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	126K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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IRLBA3803PPBF 数据手册

PD - 91841C

IRLBA3803

HEXFET^®Power MOSFET

●

Logic-LevelGateDrive

Advanced Process Technology

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Purchase IRLBA3803/P for solder plated option.

V_DSS= 30V

_DS(on)= 0.005Ω

I_D= 179A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The Super-220 is a package that has been designed to have the same mechanical

outline and pinout as the industry standard TO-220 but can house a considerably

larger silicon die. It has increased current handling capability over both the TO-220

and the much larger TO-247 package. This makes it ideal to reduce component

count in multiparalled TO-220 applications, reduce system power dissipation,

upgrade existing designs or have TO-247 performance in a TO-220 outline.

Super - 220

This package has also been designed to meet automotive qualification standard

Q101.

Absolute Maximum Ratings

Parameter

Max.

179

126

720

270

1.8

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±16

610

Single Pulse Avalanche Energyꢀ

Avalanche Currentꢀ

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Recommended clip force

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

0.5

Max.

Units

°C/W

R_θJC

0.55

–––

R_θCS

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

R_θJA

–––

www.irf.com

05/20/02

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