Datasheet > IRLB4030

IRLB4030

更新时间： 2024-11-22 14:52:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	289K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRLB4030 数据手册

PD - 97369

IRLB4030PbF

Applications

l DC Motor Drive

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

100V

3.4m

4.3m

Ω

max.

I_D

180A

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

180

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

130

730

P_D@T_C= 25°C

370

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 16

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

305

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

–––

Units

°C/W

R_θ

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

www.irf.com

02/12/09

12 3 4 5 6 7...9

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