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IRLB8743PBF PDF预览

IRLB8743PBF

更新时间: 2024-11-21 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
9页 267K
描述
HEXFET Power MOSFET

IRLB8743PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.69Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:708814
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:IRLB8743PBF
Samacsys Released Date:2019-03-26 03:24:34Is Samacsys:N
雪崩能效等级(Eas):310 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):78 A最大漏源导通电阻:0.0032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):620 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLB8743PBF 数据手册

 浏览型号IRLB8743PBF的Datasheet PDF文件第2页浏览型号IRLB8743PBF的Datasheet PDF文件第3页浏览型号IRLB8743PBF的Datasheet PDF文件第4页浏览型号IRLB8743PBF的Datasheet PDF文件第5页浏览型号IRLB8743PBF的Datasheet PDF文件第6页浏览型号IRLB8743PBF的Datasheet PDF文件第7页 
PD - 96232  
IRLB8743PbF  
HEXFET® Power MOSFET  
Applications  
l Optimized for UPS/Inverter Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial use  
VDSS RDS(on) max  
Qg  
36nC  
3.2m  
30V  
D
S
D
G
Benefits  
TO-220AB  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
IRLB8743PbF  
G
D
S
Gate  
Drain  
Source  
l Lead-Free  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
± 20  
150  
V
GS  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ TC = 25°C  
D
D
D
110  
@ TC = 100°C  
@ TC = 25°C  
A
78  
620  
DM  
140  
P
P
@TC = 25°C  
@TC = 100°C  
Maximum Power Dissipation  
D
D
W
68  
Maximum Power Dissipation  
0.90  
Linear Derating Factor  
W/°C  
-55 to + 175  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case)  
in  
10lbf  
(1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
–––  
0.5  
1.11  
–––  
62  
Junction-to-Case  
RθCS  
RθJA  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
Notes through ‡ are on page 9  
www.irf.com  
1
04/22/09  

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