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IRL7833PBF PDF预览

IRL7833PBF

更新时间: 2024-11-21 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
13页 270K
描述
HEXFET㈢Power MOSFET

IRL7833PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.84Is Samacsys:N
雪崩能效等级(Eas):560 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):150 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.0038 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
最大脉冲漏极电流 (IDM):600 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRL7833PBF 数据手册

 浏览型号IRL7833PBF的Datasheet PDF文件第2页浏览型号IRL7833PBF的Datasheet PDF文件第3页浏览型号IRL7833PBF的Datasheet PDF文件第4页浏览型号IRL7833PBF的Datasheet PDF文件第5页浏览型号IRL7833PBF的Datasheet PDF文件第6页浏览型号IRL7833PBF的Datasheet PDF文件第7页 
PD - 95270  
IRL7833PbF  
IRL7833SPbF  
IRL7833LPbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Consumer Use  
l Lead-Free  
VDSS RDS(on) max  
Qg  
32nC  
3.8m  
30V  
Benefits  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL7833S  
TO-262  
IRL7833L  
TO-220AB  
IRL7833  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
30  
V
V
Gate-to-Source Voltage  
± 20  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
150  
110  
600  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
A
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@TC = 25°C  
@TC = 100°C  
140  
72  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.96  
W/°C  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.04  
–––  
62  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
–––  
0.50  
–––  
–––  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
°C/W  
Junction-to-Ambient  
Junction-to-Ambient (PCB Mount)  
40  
Notes  through † are on page 12  
www.irf.com  
1
05/18/04  

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