Datasheet > IRL7Y1905C

IRL7Y1905C

更新时间： 2024-11-20 23:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	114K
描述
HEXFET POWER MOSFET THRU-HOLE (TO-257AA) 50V, N-CHANNEL

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IRL7Y1905C 数据手册

PD - 94192C

HEXFET^®POWER MOSFET

THRU-HOLE (TO-257AA)

IRL7Y1905C

50V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRL7Y1905C

50V

0.125Ω 10A

Seventh Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

TO-257AA

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

5.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.12

± 16

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

2.2

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

09/06/02

12 3 4 5 6 7

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