Datasheet > IRL8114PBF

IRL8114PBF

更新时间： 2024-11-22 01:19:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	429K
描述
Optimized for UPS/Inverter Applications

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中文翻译

获取价格

数据手册

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IRL8114PBF 数据手册

IRL8114PbF

HEXFET^®Power MOSFET

Application

 Optimized for UPS/Inverter Applications

 Low Voltage Power Tools

V_DSS

30V

R_DS(on)typ.

max

3.5m

4.5m

Benefits

 Low RDS(on) at 4.5V V_GS

 Low Gate Charge

 Fully Characterized Capacitance and Avalanche SOA

 Lead-Free

I_{D (Silicon Limited)}

I_{D (Package Limited)}

120A

90A

TO-220AB

IRL8114PbF

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

IRL8114PbF

TO-220

Tube

IRL8114PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

120 

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

440 

115

P_D@T_C= 25°C

Maximum Power Dissipation

P_D@T_C= 100°C Maximum Power Dissipation

Linear Derating Factor

0.77

± 20

W/°C

V_GS

Gate-to-Source Voltage

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Thermal Resistance

Symbol

Parameter

Typ.

–––

0.50

–––

Max.

1.3

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

°C/W

–––

Notes  through are on page 7

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March 11, 2015

12 3 4 5 6 7

中文翻译

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