Datasheet > IRLB8748

IRLB8748

更新时间： 2024-11-26 11:14:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	273K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLB8748 数据手册

PD - 96231

IRLB8748PbF

HEXFET^®Power MOSFET

Applications

l Optimized for UPS/Inverter Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial use

V_DSSR_DS(on)max

15nC

4.8m

30V

Benefits

TO-220AB

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

IRLB8748PbF

Gate

Drain

Source

l Lead-Free

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

370

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C Maximum Power Dissipation

Linear Derating Factor

0.5

W/°C

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case)

10 lbf

in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

0.5

Max.

2.0

Units

R_θJC

Junction-to-Case

R_θCS

R_θJA

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Notes through are on page 9

www.irf.com

04/22/09

12 3 4 5 6 7...10

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