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IRLB3813PBF PDF预览

IRLB3813PBF

更新时间: 2024-11-21 05:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
9页 244K
描述
HEXFET Power MOSFET

IRLB3813PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.07雪崩能效等级(Eas):520 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):260 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.00195 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):230 W最大脉冲漏极电流 (IDM):1050 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLB3813PBF 数据手册

 浏览型号IRLB3813PBF的Datasheet PDF文件第2页浏览型号IRLB3813PBF的Datasheet PDF文件第3页浏览型号IRLB3813PBF的Datasheet PDF文件第4页浏览型号IRLB3813PBF的Datasheet PDF文件第5页浏览型号IRLB3813PBF的Datasheet PDF文件第6页浏览型号IRLB3813PBF的Datasheet PDF文件第7页 
PD - 97407  
IRLB3813PbF  
HEXFET® Power MOSFET  
Applications  
l Optimized for UPS/Inverter Applications  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l Power Tools  
VDSS  
30V  
RDS(on) max  
Qg (typ.)  
57nC  
1.95m @V = 10V  
GS  
D
Benefits  
S
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
G
TO-220AB  
l Lead-Free  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
30  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
260  
I
I
I
@ TC = 25°C  
D
D
190  
1050  
A
@ TC = 100°C  
DM  
230  
Maximum Power Dissipation  
P
P
@TC = 25°C  
D
D
W
120  
@TC = 100°C Maximum Power Dissipation  
Linear Derating Factor  
1.6  
W/°C  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
STG  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10lb in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.64  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
Notes  through † are on page 9  
www.irf.com  
1
07/03/09  

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