是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SUPER-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.35 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 1160 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 185 A |
最大漏极电流 (ID): | 95 A | 最大漏源导通电阻: | 0.004 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 250 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 740 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLBA3803 | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRLBA3803/P | INFINEON |
获取价格 |
30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package |
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IRLBA3803P | INFINEON |
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30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package |
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IRLBA3803PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 179A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Me |
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IRLBA3803PPBF | INFINEON |
获取价格 |
HEXFET® Power MOSFET |
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IRLBD59N04E | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRLBD59N04EPBF | INFINEON |
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Power Field-Effect Transistor, 39A I(D), 40V, 0.018ohm, 1-Element, N-Channel, Silicon, Met |
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IRLBL1304 | INFINEON |
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HEXFET㈢ Power MOSFET |
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IRLC014 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP |
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IRLC024 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP |
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