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IRLBA1304PPBF PDF预览

IRLBA1304PPBF

更新时间: 2024-11-25 20:01:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 103K
描述
Power Field-Effect Transistor, 95A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-220, 3 PIN

IRLBA1304PPBF 数据手册

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PD- 91842A  
IRLBA1304  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Ultra Low On-Resistance  
l Same outline as TO-220  
l 50% greater current in typ.  
application conditions vs. TO-220  
l Fully Avalanche Rated  
D
VDSS = 40V  
RDS(on) = 0.004Ω  
G
ID = 185Aꢀ  
Purchase IRLBA1304/P for solder plated option.  
S
Description  
The HEXFET® is the most popular power MOSFET in the world.  
This particular HEXFET® is in the Super220TM and has the same outline and  
pinout as the industry standard TO-220. It has increased current handling  
capability over both the TO-220 and the much larger TO-247 package. This  
makesitideal toreduce componentcount inmultiparalledTO-220applications,  
reduce system power dissipation, upgrade existing designs or have TO-247  
performance in a TO-220 outline. This package has also been designed to meet  
automotive qualification standard Q101.  
Super - 220  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
185, pkg limited to 95A*  
130, pkg limited to 95A*  
A
740  
300  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
2.0  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 16  
Single Pulse Avalanche Energy‚  
Avalanche Current  
1160  
100  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
30  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Recommended clip force  
°C  
N
300 (1.6mm from case )  
20  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
0.5  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.5  
–––  
58  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
–––  
* Current capability in normal application, see Fig.9.  
www.irf.com  
1
9/14/99  

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