Datasheet > IRLB8721

IRLB8721

更新时间： 2024-11-26 11:15:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	275K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLB8721 数据手册

PD - 97390

IRLB8721PbF

HEXFET^®Power MOSFET

Applications

l Optimized for UPS/Inverter Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power 30V

l High Frequency Isolated DC-DC

V_DSS

R_DS(on)max

Qg (typ.)

7.6nC

8.7m @V_GS= 10V

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

TO-220AB

IRLB8721PbF

l Lead-Free

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

250

@ T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

@T_C= 25°C

@T_C= 100°C

0.43

W/°C

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case)

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

0.5

Max.

2.3

Units

Junction-to-Case

R_θJC

R_θCS

R_θJA

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Notes through ꢀ are on page 9

www.irf.com

4/22/09

12 3 4 5 6 7...10

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