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IRLB8314PBF PDF预览

IRLB8314PBF

更新时间: 2024-11-21 15:46:07
品牌 Logo 应用领域
英飞凌 - INFINEON PC
页数 文件大小 规格书
9页 474K
描述
Power Field-Effect Transistor,

IRLB8314PBF 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:1.68
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:702301Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AB_3Samacsys Released Date:2018-10-04 09:16:42
Is Samacsys:N峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IRLB8314PBF 数据手册

 浏览型号IRLB8314PBF的Datasheet PDF文件第2页浏览型号IRLB8314PBF的Datasheet PDF文件第3页浏览型号IRLB8314PBF的Datasheet PDF文件第4页浏览型号IRLB8314PBF的Datasheet PDF文件第5页浏览型号IRLB8314PBF的Datasheet PDF文件第6页浏览型号IRLB8314PBF的Datasheet PDF文件第7页 
IRLB8314PbF  
HEXFET® Power MOSFET  
Application  
Optimized for UPS/Inverter Applications  
Low Voltage Power Tools  
VDSS  
30  
V
RDS(on) max  
(@ VGS = 10V)  
(@ VGS = 4.5V)  
Qg (typical)  
2.4  
m  
3.2  
40  
nC  
A
Benefits  
ID (Silicon Limited)  
ID (Package Limited)  
171  
130A  
Best in Class Performance for UPS/Inverter Applications  
Very Low RDS(on) at 4.5V VGS  
Ultra-Low Gate Impedance  
Fully Characterized Avalanche Voltage and Current  
Lead-Free, RoHS Compliant  
S
D
G
TO-220AB  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base part number Package Type  
IRLB8314PbF TO-220AB  
Orderable Part Number  
Form  
Quantity  
Tube  
50  
IRLB8314PbF  
Absolute Maximium Rating  
Symbol  
Parameter  
Max.  
± 20  
171  
120  
Units  
V
VGS  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current   
130  
664  
PD @TC = 25°C  
Maximum Power Dissipation  
125  
W
W
W/°C  
PD @TC = 100°C Maximum Power Dissipation  
Linear Derating Factor  
63  
0.83  
TJ  
Operating Junction and  
-55 to + 175  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Mounting Torque, 6-32 or M3 Screw  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
0.50  
–––  
Max.  
1.2  
Units  
Junction-to-Case   
RJC  
RCS  
RJA  
Case-to-Sink, Flat Greased Surface  
°C/W  
–––  
62  
Junction-to-Ambient   
Notes through are on page 8  
1
2016-08-04  

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