5秒后页面跳转
IRLB8721PBF PDF预览

IRLB8721PBF

更新时间: 2024-11-05 11:10:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 268K
描述
HEXFET Power MOSFET

IRLB8721PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.08
雪崩能效等级(Eas):98 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):62 A最大漏极电流 (ID):62 A
最大漏源导通电阻:0.0087 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):65 W
最大脉冲漏极电流 (IDM):250 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLB8721PBF 数据手册

 浏览型号IRLB8721PBF的Datasheet PDF文件第2页浏览型号IRLB8721PBF的Datasheet PDF文件第3页浏览型号IRLB8721PBF的Datasheet PDF文件第4页浏览型号IRLB8721PBF的Datasheet PDF文件第5页浏览型号IRLB8721PBF的Datasheet PDF文件第6页浏览型号IRLB8721PBF的Datasheet PDF文件第7页 
PD - 97390  
IRLB8721PbF  
HEXFET® Power MOSFET  
Applications  
l Optimized for UPS/Inverter Applications  
l High Frequency Synchronous Buck  
Converters for Computer Processor Power 30V  
l High Frequency Isolated DC-DC  
VDSS  
RDS(on) max  
Qg (typ.)  
7.6nC  
8.7m @VGS = 10V  
D
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
Benefits  
S
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
G
TO-220AB  
IRLB8721PbF  
l Lead-Free  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
30  
Drain-to-Source Voltage  
V
± 20  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
62  
I
I
I
@ TC = 25°C  
D
D
44  
250  
A
@ TC = 100°C  
DM  
65  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
P
P
@TC = 25°C  
@TC = 100°C  
D
D
W
33  
0.43  
W/°C  
-55 to + 175  
Operating Junction and  
T
T
J
Storage Temperature Range  
STG  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case)  
10lb in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
0.5  
Max.  
2.3  
Units  
Junction-to-Case  
RθJC  
RθCS  
RθJA  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
62  
–––  
Notes  through are on page 9  
www.irf.com  
1
4/22/09  

IRLB8721PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRL3103PBF INFINEON

类似代替

Advanced Process Technology
IRF3708PBF INFINEON

类似代替

SMPS MOSFET HEXFET㈢Power MOSFET
IRL2703PBF INFINEON

类似代替

HEXFET Power MOSFET

与IRLB8721PBF相关器件

型号 品牌 获取价格 描述 数据表
IRLB8743 INFINEON

获取价格

The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRLB8743PBF INFINEON

获取价格

HEXFET Power MOSFET
IRLB8748 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRLB8748PBF INFINEON

获取价格

HEXFET Power MOSFET
IRLBA1304 INFINEON

获取价格

Power MOSFET
IRLBA1304/P ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 185A I(D) | TO-220VAR
IRLBA1304P INFINEON

获取价格

HEXFET® Power MOSFET
IRLBA1304PBF INFINEON

获取价格

Power Field-Effect Transistor, 95A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRLBA1304PPBF INFINEON

获取价格

Power Field-Effect Transistor, 95A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRLBA3803 INFINEON

获取价格

HEXFET Power MOSFET