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IRF3708PBF PDF预览

IRF3708PBF

更新时间: 2024-11-25 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管脉冲PC局域网
页数 文件大小 规格书
11页 279K
描述
SMPS MOSFET HEXFET㈢Power MOSFET

IRF3708PBF 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.52Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:324914
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220AB PACKAGE
Samacsys Released Date:2018-10-28 14:51:31Is Samacsys:N
雪崩能效等级(Eas):213 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):62 A最大漏极电流 (ID):62 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):87 W
最大脉冲漏极电流 (IDM):248 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF3708PBF 数据手册

 浏览型号IRF3708PBF的Datasheet PDF文件第2页浏览型号IRF3708PBF的Datasheet PDF文件第3页浏览型号IRF3708PBF的Datasheet PDF文件第4页浏览型号IRF3708PBF的Datasheet PDF文件第5页浏览型号IRF3708PBF的Datasheet PDF文件第6页浏览型号IRF3708PBF的Datasheet PDF文件第7页 
PD - 95363  
IRF3708PbF  
IRF3708SPbF  
IRF3708LPbF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency DC-DC Isolated Converters  
with Synchronous Rectification for Telecom  
and Industrial Use  
VDSS  
30V  
RDS(on) max  
ID  
12mΩ  
62A  
l High Frequency Buck Converters for  
Computer Processor Power  
l Lead-Free  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
D2Pak  
IRF3708S  
TO-262  
IRF3708L  
l Fully Characterized Avalanche Voltage  
TO-220AB  
IRF3708  
and Current  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-to-Source Voltage  
±12  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
62  
52  
A
248  
PD @TC = 25°C  
PD @TC = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
87  
61  
W
W
0.58  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
Junction-to-Ambient (PCB mount)*  
Typ.  
Max.  
1.73  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
°C/W  
40  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through „ are on page 10  
www.irf.com  
1
6/10/04  

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