PD - 94071
IRF3709
IRF3709S
IRF3709L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
30V
RDS(on) max
ID
Converters with Synchronous Rectification
for Telecom and Industrial Use
9.0mΩ
90A
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l Ultra-Low Gate Impedance
D2Pak
IRF3709S
TO-262
IRF3709L
TO-220AB
IRF3709
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
Parameter
Drain-Source Voltage
Max.
30
Units
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
90
57
A
360
PD @TC = 25°C
PD @TA = 25°C
Maximum Power Dissipation
Maximum Power Dissipationꢀ
Linear Derating Factor
120
W
W
3.1
0.96
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB mount)ꢀ
40
Notes through are on page 11
www.irf.com
1
02/20/01