IRF3709ZCSTRL

更新时间： 2024-11-25 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	124K
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中文翻译

获取价格

数据手册

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IRF3709ZCSTRL 数据手册

PD - 94071

IRF3709

IRF3709S

IRF3709L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High Frequency Isolated DC-DC

V_DSS

30V

R_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

9.0mΩ

90A

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

l Ultra-Low Gate Impedance

D²Pak

IRF3709S

TO-262

IRF3709L

TO-220AB

IRF3709

l Very Low RDS(on) at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

360

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢀ

Linear Derating Factor

120

3.1

0.96

mW/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.04

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

Junction-to-Ambient (PCB mount)ꢀ

Notes through are on page 11

www.irf.com

02/20/01

12 3 4 5 6 7...11

中文翻译

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与IRF3709ZCSTRL相关器件

型号	品牌	获取价格	描述	数据表
IRF3709ZCSTRLP	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZCSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZCSTRRP	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZL	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZLTRL	INFINEON	获取价格	暂无描述
IRF3709ZLTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZLTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
IRF3709ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3709ZS	INFINEON	获取价格	HEXFET Power MOSFET