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IRF3710PBF PDF预览

IRF3710PBF

更新时间: 2024-11-09 04:00:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 185K
描述
HEXFET Power MOSFET

IRF3710PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.77Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:617283
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO220AB_1
Samacsys Released Date:2017-07-04 16:18:58Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):280 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):57 A
最大漏极电流 (ID):57 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF3710PBF 数据手册

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PD - 94954  
IRF3710PbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 100V  
RDS(on) = 23mΩ  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 57A  
S
Description  
Advanced HEXFET® Power MOSFETs from International Rectifier utilize  
advanced processing techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well known  
for, provides the designer with an extremely efficient and reliable device for  
use in a wide variety of applications.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50 watts. The low  
thermalresistanceandlowpackagecostoftheTO-220contributetoitswide  
acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
57  
40  
A
230  
PD @TC = 25°C  
Power Dissipation  
200  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
28  
20  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.8  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.75  
–––  
62  
°C/W  
www.irf.com  
1
1/29/04  

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