IRF3711

更新时间： 2024-01-05 20:22:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	247K
描述
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)

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中文翻译

获取价格

数据手册
替代型号

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IRF3711 数据手册

PD- 94062B

IRF3711

IRF3711S

IRF3711L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

ꢀ High Frequency Isolated DC-DC

V_DSS

20V

R_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

ꢀ

6.0mΩ

110A

ꢀ High Frequency Buck Converters for

Server Processor Power Synchronous FET

ꢀ Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

ꢀ Ultra-Low Gate Impedance

D²Pak

IRF3711S

TO-262

IRF3711L

TO-220AB

IRF3711

ꢀ Very Low RDS(on) at 4.5V V_GS

ꢀ Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Currentꢁ

110ꢀ

440

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢂ

Linear Derating Factor

120

3.1

0.96

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.04

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface ꢁ

Junction-to-Ambientꢁ

°C/W

Junction-to-Ambient (PCB mount)ꢂ

Notes ꢁ through ꢀ are on page 11

www.irf.com

11/15/01

12 3 4 5 6 7...11

中文翻译

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IRF3711 替代型号

型号	品牌	替代类型	描述	数据表
IRF3711PBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRF3711相关器件

型号	品牌	获取价格	描述	数据表
IRF3711L	INFINEON	获取价格	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id
IRF3711LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3711PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3711S	INFINEON	获取价格	POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS
IRF3711SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3711STRL	INFINEON	获取价格	High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and In
IRF3711STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 110A I(D) \| TO-263AB
IRF3711STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRF3711Z	INFINEON	获取价格	HEXFET Power MOSFET
IRF3711ZCL	INFINEON	获取价格	HEXFET Power MOSFET