Datasheet > 晶体管 > 功率场效应晶体管> IRF3711ZCSPBF

IRF3711ZCSPBF

更新时间： 2024-11-25 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
12页	354K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF3711ZCSPBF 数据手册

PD-95110

IRF3711ZCSPbF

IRF3711ZCLPbF

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l Lead-Free

V_DSSR_DS(on)max

6.0m:

20V

16nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

IRF3711ZCSPbF

IRF3711ZCLPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 25°C

@ T_C= 100°C

380

@T_C= 25°C

Maximum Power Dissipation

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.53

-55 to + 175

W/°C

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.89

Units

°C/W

R_θJC

Junction-to-Case

R_θJA

–––

Junction-to-Ambient (PCB Mount)

Notes through ꢀ are on page 11

www.irf.com

03/11/04

12 3 4 5 6 7...12

中文翻译

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IRF3711ZLPBF	INFINEON	获取价格	HEXFET Power MOSFET
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