Datasheet > IRF3711ZCSTRRP

IRF3711ZCSTRRP

更新时间： 2024-11-25 19:57:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	269K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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数据手册

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IRF3711ZCSTRRP 数据手册

PD - 94792

IRF3711ZCS

IRF3711ZCL

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

V_DSSR_DS(on)max

6.0m:

20V

16nC

Benefits

l Low R_DS(on)at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D²Pak

TO-262

IRF3711ZCS

IRF3711ZCL

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

380

@ T_C= 25°C

@ T_C= 100°C

@T_C= 25°C

Maximum Power Dissipation

@T_C= 100°C

Linear Derating Factor

Operating Junction and

0.53

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.89

Units

°C/W

R_θJC

Junction-to-Case

R_θJA

–––

Junction-to-Ambient (PCB Mount)

Notes through ꢀ are on page 11

www.irf.com

10/07/03

12 3 4 5 6 7...11

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