Datasheet > 晶体管 > 功率场效应晶体管> IRF3711ZSTRLPBF

IRF3711ZSTRLPBF

更新时间： 2024-11-25 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	247K
描述
Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF3711ZSTRLPBF 数据手册

PD- 94062B

IRF3711

IRF3711S

IRF3711L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

ꢀ High Frequency Isolated DC-DC

V_DSS

20V

R_DS(on)max

I_D

Converters with Synchronous Rectification

for Telecom and Industrial Use

ꢀ

6.0mΩ

110A

ꢀ High Frequency Buck Converters for

Server Processor Power Synchronous FET

ꢀ Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

ꢀ Ultra-Low Gate Impedance

D²Pak

IRF3711S

TO-262

IRF3711L

TO-220AB

IRF3711

ꢀ Very Low RDS(on) at 4.5V V_GS

ꢀ Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Currentꢁ

110ꢀ

440

P_D@T_C= 25°C

P_D@T_A= 25°C

Maximum Power Dissipation

Maximum Power Dissipationꢂ

Linear Derating Factor

120

3.1

0.96

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.04

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface ꢁ

Junction-to-Ambientꢁ

°C/W

Junction-to-Ambient (PCB mount)ꢂ

Notes ꢁ through ꢀ are on page 11

www.irf.com

11/15/01

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRF3711ZSTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF3711ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRF3711ZSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRF3717	INFINEON	获取价格	HEXFETPower MOSFET
IRF3717PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF3717PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,
IRF3717PBF-1_15	INFINEON	获取价格	Synchronous MOSFET for Notebook Processor Power
IRF3717TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Me
IRF3717TRPbF-1	INFINEON	获取价格	Industry-standard pinout SO-8 Package
IRF-38.2UH+-10%R36	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 10%, Ferrite-Core,
IRF-38.2UH+-5%ERE2	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 5%, Ferrite-Core,