IRF3808L

更新时间： 2024-11-24 22:31:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	162K
描述
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)

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IRF3808L 数据手册

PD - 94338A

IRF3808S

AUTOMOTIVE MOSFET

IRF3808L

Typical Applications

HEXFET^®Power MOSFET

●

Integrated Starter Alternator

●

42 Volts Automotive Electrical Systems

Benefits

V_DSS= 75V

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 0.007Ω

I_D= 106A

Description

Designed specifically for Automotive applications, this Advanced

Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-

cessing techniques to achieve extremely low on-resistance per

silicon area. Additional features of this HEXFET power MOSFET

area175°Cjunctionoperatingtemperature, lowRθJC, fastswitch-

ingspeedandimprovedrepetitiveavalancherating. Thiscombina-

tion makes the design an extremely efficient and reliable choice for

use in higher power Automotive electronic systems and a wide

variety of other applications.

D²Pak

IRF3808S

TO-262

IRF3808L

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

106

550

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

430

See Fig.12a, 12b, 15, 16

5.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted, Steady State)**

–––

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com

03/08/02

12 3 4 5 6 7...11

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