Datasheet > IRF40N03

IRF40N03

更新时间： 2024-11-18 05:39:27

品牌	Logo	应用领域
SUNTAC		/
页数	文件大小	规格书
4页	75K
描述
N-CHANNEL Power MOSFET

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数据手册

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IRF40N03 数据手册

IRF40N03

N-C^HANNELPower M^OSFET

APPLICATION

FEATURES

ꢀFast Switching

ꢀ Low ON Resistance

ꢀSimple Drive Requirement

ꢀLow Gate Charge

ꢀ Low Gate Charge

ꢀ Peak Current vs Pulse Width Curve

ꢀ Inductive Switching Curves

V_DSS

30V

R_DS(ON)Max.

..17.0mȍ

I_D

40A

PIN CONFIGURATION

SYMBOL

TO-220

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Source Voltage (Note 1)

Symbol

V_DSS

I_D

Value

Unit

Drain to Current Ё Continuous Tc = 25к, V_GS@10V

Ё Continuous Tc = 100к, V_GS@10V

Ё Pulsed Tc = 25к, V_GS@10V (Note 2)

Gate-to-Source Voltage Ё Continue

Total Power Dissipation

I_D

I_DM

170

V_GS

P_D

.50

Derating Factor above 25к

0.4

W/к

V/ns

Peak Diode Recovery dv/dt (Note 3)

dv/dt

T_J, T_STG

E_AS

4.5

Operating Junction and Storage Temperature Range

Single Pulse Avalanche Energy L=144µH,I_D=40 Amps

Maximum Lead Temperature for Soldering Purposes

Maximum Package Body for 10 seconds

Pulsed Avalanche Rating

-55 to 175

500

300

260

T_L

T_PKG

I_AS

THERMAL RESISTANCE

Symbol

șJC

Parameter

Junction-to-case

Min

Typ

Max

2.5

Units

Test Conditions

Water cooled heatsink, P_Dadjusted for a peak junction

temperature of +175к

Junction-to-ambient

1 cubic foot chamber, free air

к/W

șJA

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