IRF4104L

更新时间： 2024-11-17 22:24:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	280K
描述
AUTOMOTIVE MOSFET

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中文翻译

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数据手册

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IRF4104L 数据手册

PD - 94639A

IRF4104

IRF4104S

IRF4104L

AUTOMOTIVE MOSFET

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 40V

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 5.5mΩ

Description

I_D= 75A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D²Pak

TO-262

IRF4104L

TO-220AB

IRF4104

IRF4104S

Absolute Maximum Ratings

Parameter

Max.

120

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package limited)

@ T = 25°C

470

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.95

± 20

W/°C

E_{AS (Thermally limited)}

120

220

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

–––

Units

R_θ

°C/W

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

8/29/03

12 3 4 5 6 7...13

中文翻译

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